Photoinduced Reconfigurable Binary-Synaptic Transistor for in-Memory and Logic Operations
발표자
박상우 (연세대학교)
연구책임자
조정호 (연세대학교)
초록
내용
Reconfigurable field-effect transistors (RFETs) are a promising research area for future electronics and computing. Here, a photoinduced reconfigurable transistor (PIRT) is introduced, which changes its transport characteristics under visible light using a TiAP/indium–gallium–zinc-oxide heterojunction. Photoionization of oxygen vacancies in the TiAP layer generates carriers that enable reversible switching between binary and synaptic transistor modes. Based on this, reconfigurable logic gates operate as both digital NOT gates and synaptic comparators depending on light exposure, and a PIRT-based in-memory array performs multiply–accumulate operations, showing potential for efficient, high-density computing.