Molecular Interlayers for Interfacial Dipole Modulation in Tin Halide Perovskite Thin Film Transistors
발표자
Juan Anthony Prayogo (Pukyong National University)
연구책임자
장재원 (부경대학교)
초록
내용
Effective defect passivation and energy level alignment are critical for enhancing the performance of tin (Sn) halide perovskite in thin-film transistors (TFTs). Herein, a series of quinoxaline-based interlayer molecules functionalized with phosphine oxide group and designed with varying dipole moments were developed. These molecular interlayers simultaneously reduce interfacial defects and modulate the energy barrier at the perovskite/metal interface. Notably, fluorinated derivatives exhibit superior interfacial dipole effects, leading to improved passivation and favorable energy level alignment. As a result, the modified TFTs demonstrate enhanced field-effect mobility, higher on/off current ratios, and improved operational stability.