Universal Interfacial Layer via Sulfoxide-Modulated Zinc Oxide Nanocrystal for Enhanced Photocurrent and Durability in Organic Photoelectronic Devices
발표자
정재현 (중앙대학교)
연구책임자
왕동환 (중앙대학교)
초록
내용
Organic photoelectronic devices including organic photovoltaics (OPVs) and organic photodetectors (OPDs) require electron transporting interlayer (ETL) for suitable photocurrent transport and external hole blocking. This study employs zinc oxide nanocrystals (ZnO NCs) coordinated with sulfoxide-based L-type ligands as an ETL, resulting in enhanced photocurrent generation. The energy level and interlayer morphology are optimized for device integrity, which makes it suitable for photocurrent flow and minimizing dark current. Enhanced electron mobility and trap density allows efficient charge transport and photo-response enhancement. Minimized leakage current flow of the proposed device enables higher light signal detectivity with reduced shot noise. Moreover, stability enhancement adopting L-type protector assisted ZnO NCs as an ETL is demonstrated, underscoring their applicability to next-generation organic photoelectronic devices.