Chemically inert interface via perylene diimide transfer process for enhanced stability in perovskite optoelectronics
발표자
이유민 (중앙대학교)
연구책임자
왕동환 (중앙대학교)
초록
내용
In this study, n-type perylene diimide (NPDI) was introduced into the transfer process to form an interfacial passivation layer, thereby contributing to the suppression of interface defects in perovskite optoelectronic devices and the formation of a complete interface with the electrode, thereby improving device performance and stability. The conventional solvent spin-coating method used for introducing the electron transport layer inevitably results in interfacial penetration, leading to defect formation caused by solvent residues. This limits the long-term stability of perovskite optoelectronic devices. To overcome these limitations, a transfer process was employed to eliminate direct contact with the underlying layer and solvent, enabling the formation of a hydrophobic and chemically stable interface. Therefore, NPDI transfer-based devices are optimized to enhance the stability and durability of perovskite optoelectronic devices through controlled interface engineering