Unlocking the Properties of ALD-Grown Thin NiOx Layer for Efficient, Stable Inverted Perovskite Solar Cells
발표자
Asmaa Mohamed (Jeonbuk National University)
연구책임자
강재욱 (전북대학교)
초록
내용
Nickel oxide (NiOx) is an effective hole transport layer (HTL) in inverted perovskite solar cells (IPSC) due to its good energy alignment, transparency, and stability. While atomic layer deposition (ALD) enables precise NiOx growth, conventional approaches using plasma or ozone co-reactants pose safety and complexity challenges.Herein, we studied the temperature-dependent growth (150°C to 300°C) of NiOx films using H2O-based ALD as a safer and scalable alternative, examining film growth rate, crystallinity, morphology, and optical properties. Results show that H2O-based ALD produces high-quality NiOx films with excellent uniformity, pinhole-free and ultra-smooth surfaces (RMS≤1 nm), critical for minimizing charge recombination. IPSCs with the optimized NiOx HTL achieved a champion efficiency (~17.4%), exhibiting a 53% higher efficiency than other temperatures. This plasma/ozone-free method is ideal and easiest, ensuring potential for scaling up.