Mitigating Defects and Enhancing Performance in 2D Sn Halide Perovskite FETs via Alkali Halide Additive Engineering
발표자
신승윤 (한양대학교)
연구책임자
박희준 (한양대학교)
초록
내용
Sn-based 2D metal halide perovskites (MHPs) have emerged as promising channel materials for high-performance p-channel field-effect transistors (FETs), owing to their low hole effective mass and high mobility in the lateral direction.[1,2] However, the practical application of Sn-based 2D metal halide perovskites (MHPs) is hindered by poor film quality induced by fast crystallization, which arises from defects at both interfaces and the bulk of the perovskite film and intrinsic instability against oxidation.[1,3] In this work, to overcome the film quality limitations of Sn-based 2D MHPs, we incorporated KI and RbI into the perovskite precursor solution. This additive effectively mitigated defect formation and promoted uniform morphology with enlarged grain sizes. These improvements resulted in field-effect mobility of 1.35 cm² V⁻¹ s⁻¹ and an on/off current ratio exceeding 1.0 × 10⁶, accompanied by remarkable operational stability and reproducibility.