Defect Modulation via Interfacial Engineering in Halide Perovskite Memristors
발표자
박상증 (광주과학기술원)
연구책임자
김호범 (광주과학기술원)
초록
내용
Halide perovskites (HPs) have become one of the most important semiconducting materials for next-generation memristors, owing to their low halide vacancy formation energy and facile ion migration. However, uncontrolled defect density in HP memristors can lead to stochastic resistive switching, or in severe cases, completely inhibit resistive switching, undermining their reliability.
In this study, we develop HP memristors by modifying the interface between perovskite layer of α-formamidinium lead triiodide (FAPbI3) and the electrode. The interfacial engineering effectively modulates defect states, enabling the devices to exhibit low operating voltage and stable memristive behavior. Furthermore, we develop a crossbar array based on multi-level resistance state memristors, demonstrating a high on/off ratio, device yield and operational stability.