Ultrashort Photonic Annealing as a Strategy to Suppress Surface Defects in PbS Quantum Dot Solar Cells
발표자
마현수 (대구경북과학기술원)
연구책임자
최종민 (대구경북과학기술원)
초록
내용
This study presents ultrafast flashlight annealing (FLA) as an effective alternative to conventional thermal annealing (TA) for improving colloidal quantum dot (CQD) solar cells. TA enhances conductivity and nanocrystal packing but causes surface oxidation and hydroxylation, generating trap states that reduce device efficiency. FLA dramatically reduces annealing time to milliseconds, limiting thermal damage and preventing unwanted reactions. As a result, FLA-treated CQD films show lower trap densities, improved charge transport, and better photovoltaic performance. Devices using FLA achieve a higher open-circuit voltage (0.66 V) and power conversion efficiency (13.5%) than those with TA (0.63 V, 12.71%). Moreover, FLA preserves film morphology and enhances device stability. These findings demonstrate that FLA not only boosts performance but also extends durability, making it a highly promising technique for future CQD optoelectronic devices.