The Polymer Society of Korea

Abstract

This study explores rad-hard amorphous metal-oxide thin-film transistors (TFTs) fabricated by solution processing, focusing on stability under high-energy irradiation. ZnO and IGZO TFTs show significant electrical degradation from proton-induced oxygen vacancies, while amorphous zinc tin oxide (a-ZTO) and zinc–indium–tin oxide (ZITO) with optimized compositions exhibit superior radiation resistance. ZITO with a 4:1:1 Zn:In:Sn ratio, combined with thin channels and organic passivation layers, demonstrates excellent in situ and ex situ stability with minimal threshold voltage shifts and high mobility under harsh radiation. Additionally, doping InZnO with group IV metals (Ti, Zr, Hf) strengthens oxygen bonding and widens the bandgap, significantly reducing radiation-induced defects. These findings highlight promising routes for developing large-area, rad-hard electronics for aerospace and nuclear applications.