[2PS-214]
Stretchable High-k Metal Oxide Transistors via Azide-Functionalized Ligand Patterning and Laser Lift-Off Transfer
발표자장수련 (포항공과대학교)
연구책임자정대성 (포항공과대학교)
Abstract
Here, we employ a ligand exchange strategy for direct photopatterning of sol–gel oxide thin films, which is combined with a laser lift-off process using a sacrificial PZT layer. Azide-terminated bidentate ligands with ethylene glycol spacers are applied to zirconium dioxide (ZrO₂), indium oxide (In₂O₃), and zinc oxide (ZnO) films, enabling UV-induced crosslinking and patterning.
A PZT layer is deposited on a sapphire substrate as a sacrificial layer. After sequential spin-coating and photopatterning of ZrO₂, In₂O₃, and ZnO layers, a PDMS film is laminated on top. XeCl excimer laser irradiation from the sapphire backside sublimates the PZT, enabling transfer of the oxide stack onto the flexible PDMS substrate. This method enables high-resolution fabrication of oxide TFTs on rigid substrates and their release onto stretchable supports. The devices are compatible with solution-based processing, supporting their potential for next-generation flexible electronics.