[1PS-221]
우수논문발표상 응모자Self-assembled High Tin-containing Block Copolymer Patterns for Enhancing Ultra-thin EUV Photoresists
발표자최수빈 (카이스트)
연구책임자정연식 (카이스트)
Abstract
In EUV lithography for advanced semiconductor patterning, resist sensitivity and etch resistance are key performance metrics. Tin-based metal oxide resists (MORs) have emerged as promising candidates, but the ultra-thin films required for hyper-NA processes cause pattern loss and etching issues. In this study, poly(trimethyltin acrylate)-b-poly(methyl methacrylate) was synthesized via RAFT polymerization and post-polymerization modification to evaluate the application potential of self-assembled patterns. Gradient and triblock copolymers were also designed to achieve vertical alignment without neutral brushes. The polymers were characterized by NMR and GPC, and tin content was analyzed using ICP-OES and TGA. Vertical alignment was achieved by annealing with a neutral brush, followed by RIE etching, and pattern ordering was confirmed by SEM.