[2PS-061]
Ag2Te Quantum Dot Short-Wave Infrared Phototransistor
발표자이나경 (서강대학교)
연구책임자강문성 (서강대학교)
Abstract
Ag₂Te quantum dots (QDs) offer eco-friendly short-wave infrared (SWIR, 1.0–2.5 μm) photodetection with solution processability and spectral tunability, avoiding toxic Pb/Hg. However, energy level misalignment with transport layers and parasitic current leakage limit performance.
We developed dual optimization: (1) ligand engineering adjusts QD energy levels to match MOS electron transport layers, improving charge injection and reducing surface defects; (2) selective QD photopatterning via UV-induced crosslinking confines QDs to channel regions, suppressing dark current from source-drain bridging.
The resulting Ag₂Te QD-MOS hybrid phototransistors achieve suppressed dark current, effective SWIR photoresponse, and excellent stability. This scalable approach enables high-performance, environmentally friendly SWIR optoelectronics for next-generation imaging and sensing applications.