Recent Trends of Molecular Engineering in Electronics and Energy Materials
[1L13-6]
Etchant-Free Dry-Developable EUV Photoresists Materials Based on Small Organometallic Complexes
발표자홍석원 (GIST)
연구책임자홍석원 (GIST)
Abstract
Extreme ultraviolet (EUV) lithography requires innovative photoresist materials that enable high-resolution patterning without relying on wet development. This talk introduces two etchant-free, dry-developable EUV photoresist systems based on small organometallic molecules: Fe(styrene-acac)₃ and N-heterocyclic carbene (NHC)–metal complexes. Both materials exhibit high EUV reactivity and enable pattern formation via straightforward thermal development under vacuum, eliminating the need for toxic solvents or corrosive etchants. The Fe-based system achieves 1 µm and sub-100 nm patterns, while NHC–Au and Ag complexes demonstrate 80 nm resolution with competitive line edge roughness and EUV sensitivity. Through EUV-photoelectron spectroscopy, NEXAFS, and DFT calculations, we elucidate their reaction mechanisms, highlighting secondary electron-driven polymerization. These findings offer promising routes toward sustainable and scalable EUV lithographic processes.