[3PS-096]
Epoxy-based Reaction Driven Low-temperature Hybrid Bonding for Next-generation HBM and 3D packaging
발표자박규식 (인하대학교)
연구책임자윤창민 (인하대학교)
Abstract
In this study, low-temperature Cu/SiO2 hybrid bonding is achieved through a synergistic combination of an epoxy-based reaction and electroless deposition (ELD). To enable this, the SiO2 dielectric surface is functionalized with two different silanes of GPTMS and APTES, which can promote the epoxy ring-opening reactions and selective Au ELD on Cu pads. After sequential surface modification and ELD, the chips were bonded via thermocompression. As a result, complete Cu/SiO2 hybrid bonding was realized at a low temperature of 250 °C without interfacial delamination or voids. Low-temperature hybrid bonding is achieved through the strong covalent bonding induced by epoxy ring-opening reaction, which enhances adhesion strength and enables bonding at reduced temperatures. This scalable combined method of epoxy polymerization and ELD can be a promising approach for next-generation HBM and 3D packaging technologies.
- 본 연구는 2025년도 정부(교육부)의 재원으로 한국연구재단의 지원을 받아 수행된 기초연구사업임(RS-2022-NR070869).