The Polymer Society of Korea

Abstract

Tin (Sn) halide perovskites have emerged as compelling alternatives to their lead-based analogues, offering substantially lower environmental risk. Their inherently low bandgap makes them ideal for low-bandgap subcells—achieved by alloying with lead—in all-perovskite tandem solar cells, thereby complementing high-bandgap front cells. I will first describe our strategy to eliminate vertical lattice inhomogeneity in solution-processed films, which has enabled tandem devices to approach 28 % power conversion efficiency. Next, I will present our breakthroughs in harnessing Sn perovskites for near-infrared photodetectors at 940 nm. Finally, I will discuss our recent achievement of record-performance Sn perovskite thin-film transistors, with mobilities exceeding 80 cm²V⁻¹s⁻¹ and on/off ratios above 3×10⁹, which pave the way for energy efficient complementary logic circuits.