Directly Anchored sc-SWNT Networks on SiO2 Enabling Thin, Dense, and Reproducible CNT FET Channels
발표자
신재민 (충북대학교)
연구책임자
임보규 (충북대학교 공업화학과)
초록
내용
Single-walled carbon nanotubes (SWNTs) are promising channel materials for high-performance electronics. However, forming dense, uniform, and reproducible semiconducting-SWNT (sc-SWNT) random networks remains challenging due to weak interfacial adhesion and a thickness-density trade-off. Fluorene-based conjugated polymers have been primarily applied to metal substrates, while sc-SWNT networks on SiO2 are often considered unstable during rinsing or sonication. Here we demonstrate oxide-compatible direct anchoring of sc-SWNTs on SiO2 using a fluorene-based conjugated polymer, resulting in robust networks that remain intact after washing and ultrasonic agitation. By simplifying processing and reducing interfacial layers compared with previously multilayer strategies, this method supports stable channel formation and benefits charge transport. Tuning dispersion concentration enables thin yet high-density channels and CNT FETs with improved durability and device-to-device reproducibility.