Low voltage operating neuromorphic memristor with PVDF-MXene nanosheet blends
발표자
최승재 (부산대학교 미세공정연구실)
연구책임자
정범진 (부산대학교)
공동저자
최승재 (부산대학교 미세공정연구실), 정범진 (부산대학교)
초록
내용
Emulating a biological synapse is desired for overcoming von-Neumann bottleneck and memory wall issues in semiconductor memories. In this regards, neuromorphic memristors have gained great attention due to their excellent data storage capability and fast response, while reducing energy consumption is still challenging. Herein, we fabricated a resistive switching memory with a heterostructure, consisting of MXene (Ti3C2TX) nanosheets blended with polyvinylidene fluoride (PVDF). The device was fabricated by simple solution casting and spin-coating, followed by mild heat treatment. The device operated in low voltage range (-0.12 V to 0.42 V) with a high ON/OFF ratio and a rectification ratio of 108. We confirmed non-volatile memristive characteristics with a retention time exceeding 104 seconds and robust switching endurance over multiple cycles. Synaptic plasticity was demonstrated, and neuromorphic simulations based on measured device parameters achieved ~94% MNIST recognition accuracy.