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분자전자 부문위원회(I)

  • Apr 09(Thu), 2026, 09:00 - 12:00
  • 포스터장
  • Chair : 김재홍, 양상희
09:00 - 10:30
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[1PS-035]

우수논문발표상 응모자

Low voltage operating neuromorphic memristor with PVDF-MXene nanosheet blends

발표자최승재 (부산대학교 미세공정연구실)

연구책임자정범진 (부산대학교)

공동저자최승재 (부산대학교 미세공정연구실), 정범진 (부산대학교)

Abstract

Emulating a biological synapse is desired for overcoming von-Neumann bottleneck and memory wall issues in semiconductor memories. In this regards, neuromorphic memristors have gained great attention due to their excellent data storage capability and fast response, while reducing energy consumption is still challenging. Herein, we fabricated a resistive switching memory with a heterostructure, consisting of MXene (Ti3C2TX) nanosheets blended with polyvinylidene fluoride (PVDF). The device was fabricated by simple solution casting and spin-coating, followed by mild heat treatment. The device operated in low voltage range (-0.12 V to 0.42 V) with a high ON/OFF ratio and a rectification ratio of 108. We confirmed non-volatile memristive characteristics with a retention time exceeding 104 seconds and robust switching endurance over multiple cycles. Synaptic plasticity was demonstrated, and neuromorphic simulations based on measured device parameters achieved ~94% MNIST recognition accuracy.

Poster