POS6-1025
Low-Temperature ALD for Process-Robust and Stable p-i-n Perovskite Solar Cells via SnO2 Buffer and Al2O3 Encapsulation
When and Where
Nov 30, -0001
12:00am - 12:00am
Presenter(s)
Uk Jin Choi (Pusan National University)
Co-Author(s)
Abstract
Inverted (p-i-n) perovskite solar cells (PSCs) are promising for high efficiency and low hysteresis, but their thermal and environmental instability hinders commercialization. This study demonstrates a dual-protection strategy utilizing low-temperature Atomic Layer Deposition (ALD) to enhance both the internal interface and external encapsulation. First, an inorganic SnO2 buffer layer was deposited via ALD at 90°C to replace the thermally fragile BCP. Unlike BCP-based devices that suffer severe degradation during the glass lamination process, the ALD-SnO2 devices exhibited remarkable process robustness, maintaining performance through improved interfacial adhesion and thermal stability. Second, a highly conformal Al2O3 thin-film encapsulation (TFE) layer was deposited via ALD at 60°C to serve as a robust moisture barrier. The encapsulated devices showed significantly enhanced long-term reliability, maintaining initial efficiency even under harsh Damp Heat conditions (85°C / 85% RH). This synergistic approach, utilizing optimized low-temperature ALD processes, suggests a viable pathway for fabricating high-performance PSCs with superior environmental and thermal tolerance for practical applications.
