INIDS3-1702
Development of Inorganic Photoresists from an Electron-Driven Chemistry Perspective: From EUV to Blue-X Lithography
Topic
IDS3. Photoresist: 50 Years of Innovation and the Next 50 Years (Sponsored by DONGJIN SEMICHEM)
When and Where
Sep 29, 2026
17:05 - 17:25
Room 201
Session Chairs
Gregory DENBEAUX
Presenter(s)
HyunDam Jeong (Chonnam National University)
Co-Author(s)
Abstract
Continued scaling of semiconductor devices requires photoresists with molecular-scale dimensions, high etch resistance, and precisely controlled responses to high-energy radiation. Our group has developed inorganic molecular resists for EUV and shorter-wavelength lithography from the perspective of electron-driven chemistry, focusing on chemical reactions initiated by photoelectrons and secondary electrons. Our studies began with tin-based molecular resists, including a non-alkyl tin-oxo cluster and tin-oxide-derived molecular materials prepared through organic-acid functionalization. These studies showed that oxide-derived molecular structures and ligand chemistry can provide new routes for controlling solubility switching and chemical contrast in inorganic resists. Mechanistic investigations further demonstrated that lithographic sensitivity cannot be understood solely in terms of photon absorption, but is strongly influenced by electron-driven bond dissociation and subsequent molecular networking. This concept was extended to Blue-X lithography through the development of organo-functionalized cyclic siloxane molecular resists. At 6.7 nm, the photoionization cross section of Si exceeds that of Sn, providing a wavelength-dependent basis for silicon-based resist design. In particular, an organo-functionalization significantly enhanced Blue-X sensitivity by promoting efficient electron-driven bond dissociation and subsequent molecular networking. These results suggest that future inorganic photoresists should be molecularly designed by jointly controlling wavelength-dependent photoionization, electron-driven bond dissociation, and molecular networking. This electron-driven chemistry-guided approach provides a framework for extending inorganic molecular resist design from EUV to Blue-X lithography.
