POS5-0488
Multi-Valued Logic Circuits using P-N Heterojunction Electrolyte-Gated Transistors
Topic
S5. Polymers for Electronics and Photonics
When and Where
Sep 29, 2026
08:30 - 09:30
Room 301 (Grand Ballroom)
Session Chairs
Hae Jung SON
Boseok KANG
Presenter(s)
Jaehyun Han (INHA university)
Co-Author(s)
Abstract
Electrolyte-gated transistors (EGTs) are attractive platforms for low-power neuromorphic and logic applications, yet multi-valued logic remains largely unexplored. Here, we demonstrate a vertically stacked heterojunction EGT exhibiting pronounced negative differential transconductance (NDT), enabling stable intermediate states beyond conventional binary operation. By integrating the device into a ternary inverter, three distinct logic levels are achieved. The intermediate state originates from the NDT regime and can be tuned through device design parameters, providing robust multi-valued logic operation. To investigate the origin of the NDT behavior, magnetoconductance measurements were employed as a direct probe of charge-carrier interactions. The magnetic-field response is strongly correlated with the NDT regime, revealing that spin-dependent charge-carrier recombination governs the observed behavior. Furthermore, neural-network simulations demonstrate reduced switching energy for ternary operation compared with binary counterparts. These results establish a strategy for realizing multi-valued logic and provide new insight into charge-transport mechanisms in electrolyte-gated electronics.
