POS5-0560
Development of Y6 derivatives for near-infrared organic photodetectors
Topic
S5. Polymers for Electronics and Photonics
When and Where
Oct 1, 2026
08:30 - 09:30
Room 301 (Grand Ballroom)
Session Chairs
Jinkee HONG
Ki Su KIM
Presenter(s)
Chaehyun Byun (Gyeongsang National University)
Co-Author(s)
Abstract
Organic photodetectors (OPDs) are promising next-generation devices because they offer low-cost fabrication, solution processing, flexibility, and tunable optoelectronic properties, with recent studies extending detection from the visible to near-infrared (NIR) region. However, fullerene acceptors have limited absorption, poor energy-level tunability, high cost, and complex synthesis, while early NFAs such as PDIs and NDIs still showed insufficient NIR response and suboptimal charge transport. Therefore, this study developed two Y6-derived NFAs, BTP-eC9-4F and BTP-eC9-4Cl, through side-chain and end-group engineering for PBDB-T-based OPDs, demonstrating that BTP-eC9-4Cl provides stronger NIR absorption, lower dark current, and high detectivity for high-performance NIR OPD applications.
As a result, BTP-eC9-4F and BTP-eC9-4Cl were developed as non-fullerene acceptors for PBDB-T-based organic photodetectors. End-group and side-chain engineering enabled optimization of their optoelectronic properties, resulting in enhanced visible and near-infrared photoresponse. Among them, BTP-eC9-4Cl showed superior performance, achieving a detectivity of 8.49 × 10¹⁰ Jones at 850 nm under −2 V bias owing to its low dark current and favorable morphology, demonstrating strong potential for high-performance NIR photodetectors.
As a result, BTP-eC9-4F and BTP-eC9-4Cl were developed as non-fullerene acceptors for PBDB-T-based organic photodetectors. End-group and side-chain engineering enabled optimization of their optoelectronic properties, resulting in enhanced visible and near-infrared photoresponse. Among them, BTP-eC9-4Cl showed superior performance, achieving a detectivity of 8.49 × 10¹⁰ Jones at 850 nm under −2 V bias owing to its low dark current and favorable morphology, demonstrating strong potential for high-performance NIR photodetectors.
